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Phosphoric Acid (H₃PO₄)

Description

CAS No. 7664-38-2

Applications

Semiconductor Fabrication (Etching Process)
Form : Liquid / Acid
Effect : Etching Nitride off the SiO2 Water
Usage : Wet Etching Process in Semiconductor

Paramerter Spec Detection Limit Analysis Measured Value Unit Measurement Type
Cylinder Predssure 33 PSIG Vapour
Chemical Purity 99.998 99.998 >99.998 By Difference % Vapour
Chlorosilanes 0.2 0.2 ND < 0.2 Validation PPMV Vapour
CO 1 0.1 ND < 0.1 GC PPMV Vapour
CO2 1 0.1 ND < 0.1 GC PPMV Vapour
Hydrogen 200 0.1 0.5 GC PPMV Vapour
Water 1 0.5 ND < 0.5 Hygrometer PPMV Vapour
Higher Silanes 50 5 0.1 GC PPMV Vapour
Nitrogen 1 0.1 ND < 0.1 GC PPMV Vapour
O2 + Ar 1 0.1 ND < 0.1 GC PPMV Vapour
Silane 1000 5 11 GC PPMV Vapour
Siloxanes 5 5 ND < 5 GC PPMV Vapour
THC as CH4 1 0.1 ND < 0.1 GC PPMV Vapour
Requested Net Weight 10 KG
Actual Net Weight 10088.7 GM